Semiconductor packages having through electrodes and methods of fabricating the same

ABSTRACT

Provided are semiconductor packages having through electrodes and methods of fabricating the same. The method may include may include forming a wafer-level package including first semiconductor chips stacked on a second semiconductor chip, forming a chip-level package including fourth semiconductor chips stacked on a third semiconductor chip stacking a plurality of the chip-level packages on a back surface of the second semiconductor substrate of the wafer-level package, polishing the first mold layer of the wafer-level package and the first semiconductor chips to expose a first through electrodes of the first semiconductor chip, and forming outer electrodes on the polished first semiconductor chips to be connected to the first through electrodes, respectively.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.14/264,123, filed on Apr. 29, 2014, which is U.S. non-provisional patentapplication claims priority from Korean Patent Application No.10-2013-0074572, filed on Jun. 27, 2013, in the Korean IntellectualProperty Office, the entire contents of which are hereby incorporated byreference.

BACKGROUND

Example embodiments of the inventive concept relate to a semiconductorproduct, and in particular, to semiconductor packages having throughelectrodes and methods of fabricating the same.

Conventionally, a semiconductor package has been realized using a wirebonding technology. Recently, a through-silicon via (TSV) technology wassuggested to meet an increasing demand for high performance. Accordingto the conventional TSV technology, an wafer is bonded to a carrierusing an adhesives layer, and then, the carrier is de-bonded from thewafer, after a polishing process to a backside surface of the wafer.Likewise, additional steps of handling the carrier are needed, and thus,the conventional TSV technology suffers from low productivity and highfabrication cost.

SUMMARY

Therefore, it is an aspect of an example embodiment to provide a methodof forming a semiconductor package, the method including: providing afirst chip and a second chip, the providing including: providing a firstactive layer on a front surface of a first substrate of a first chip;providing a second active layer on a front surface of a second substrateof a second chip; stacking the first chip and the second chip so thatthe first active layer of the first chip faces the second active layerof the second chip; forming a mold layer on the first chip and on thefront surface of the second substrate of the second chip to providerigidity to the semiconductor package, the mold layer including apolymer material; thinning a back surface of the second substrate havingthe mold layer; and forming back-side electrodes on the thinned backsurface of the second substrate, the back-side electrodes beingelectrically connected to second through electrodes in the secondsubstrate.

The thinning the back surface of the second substrate may includethinning the back surface using a mechanical process.

The thinning the back surface of the second substrate may expose thesecond through electrodes in the second substrate, the second throughelectrodes being electrically connected to the second active layer.

In an example embodiment, the method may further include forming secondthrough electrodes in the thinned second substrate before forming theback-side electrodes.

In another example embodiment, the method may further include providingfirst connection electrodes between the first chip and the second chipto electrically connect the first active layer and the second activelayer.

In accordance with an example embodiment, there is a method of forming aplurality of semiconductor packages, the method including: forming afirst semiconductor package according to the method of the above;stacking a second semiconductor package on the first semiconductorpackage, the stacking the second semiconductor package including:inverting the first semiconductor package so that the thinned backsurface of the second chip faces upward; and stacking the secondsemiconductor package on the inverted first semiconductor package sothat a back surface of the second semiconductor package faces thethinned back surface of the second chip of the first semiconductorpackage.

In one example embodiment, the method may further include thinning theback surface of the first chip of the first substrate in the firstsemiconductor package.

In another example embodiment, the method may further include formingfirst back-side electrodes on the thinned back surface of the firstsubstrate, the first back-side electrodes being electrically connectedto a plurality of first through electrodes in the first substrate, theplurality of first through electrodes being electrically connected tothe first active layer.

The thinning the back surface of the first chip of the first substratein the first semiconductor package may expose the plurality of firstthrough electrodes in the first substrate.

In yet another example embodiment, the method may further includeforming the first through electrodes in the thinned back surface of thefirst substrate before forming the first-back-side electrodes.

The providing the first and the second chips may not include bonding acarrier to any one of the first and the second chips and further may notinclude debonding the carrier from any one of the first and the secondchips.

The first active layer may include first transistors and the secondactive layer may include second transistors.

A coefficient of thermal expansion (CTE) of the substrate of the secondchip and a CTE of the mold layer may be within an order of magnitude.

A ratio of a coefficient of thermal expansion (CTE) of the substrate ofthe second chip and a CTE of the mold layer may be in a range from 1 to3.

In accordance with an example embodiment, there is a semiconductordevice including: a first semiconductor package including: a first chipincluding a first active layer at a first front side of the first chip;a second chip including a second active layer at a second front side ofthe second chip, the first and the second chips being stacked so thatthe first active layer faces the second active layer; and a mold layerdisposed between the first and the second chips; and a secondsemiconductor package including: a third chip including a third activelayer at a third front side of the third chip; and a fourth chipincluding a fourth active layer at a fourth front side of the fourthchip, the third and the fourth chips being stacked so that the thirdactive layer faces the fourth active layer; wherein a third back side ofthe third chip faces a second back side of the second chip.

In an example embodiment, the first chip further includes first throughelectrodes, the second chip further includes second through electrodes,the third chip further includes third through electrodes, and the fourthchip further includes fourth through electrodes.

In another example embodiment, there semiconductor device furtherincludes a plurality of electrodes which connect the second throughelectrodes and the third through electrodes.

The first chip may have a first width and the second chip may have asecond width that is longer than the first width.

The fourth chip may have a fourth width and the third chip may have athird width that is longer than the fourth width.

A coefficient of thermal expansion (CTE) of the substrate of the secondchip and a CTE of the mold layer may be within an order of magnitude.

A ratio of a coefficient of thermal expansion (CTE) of the substrate ofthe second chip and a CTE of the mold layer may be in a range from 1 to3.

In an example embodiment, the device further includes first connectionelectrodes electrically connecting the first and the second activelayers.

In accordance with another example embodiment, there is a semiconductordevice including: a first semiconductor package including: a first chipincluding a first active layer at a first front side of the first chip;a second chip including a second active layer at a second front side ofthe second chip, the second chip being stacked on the first chip; and amold layer disposed between the first and the second chips; and a secondsemiconductor package including: a third chip including a third activelayer at a third front side of the third chip; and a fourth chipincluding a fourth active layer at a fourth front side of the fourthchip, the fourth chip being stacked on the third chip; wherein a thirdback side of the third chip faces a second back side of the second chipand wherein the first chip has a first width and the second chip has asecond width that is longer than the first width.

The fourth chip may have a fourth width and the third chip as a thirdwidth that is longer than the fourth width.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting, example embodiments asdescribed herein.

FIGS. 1A through 1M are sectional views illustrating a method offabricating a semiconductor package according to example embodiments ofthe inventive concept.

FIG. 1N is a sectional view illustrating a semiconductor packageaccording to an embodiment modified from that of FIG. 1L.

FIG. 1O is a sectional view illustrating a semiconductor packageaccording to an embodiment modified from that of FIG. 1M.

FIG. 1P is a plan view of the example embodiment of FIG. 1A.

FIGS. 2A through 2I are sectional views illustrating a method offabricating a semiconductor package according to other exampleembodiments of the inventive concept.

FIGS. 3A through 3E are sectional views illustrating a method offabricating a semiconductor package according to still other exampleembodiments of the inventive concept.

FIG. 4A is a block diagram illustrating a memory card including thesemiconductor packages according to example embodiments of the inventiveconcept.

FIG. 4B is a block diagram illustrating an information processing systemincluding the semiconductor packages according to example embodiments ofthe inventive concept.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

DETAILED DESCRIPTION

Example embodiments of the inventive concepts will now be described morefully with reference to the accompanying drawings, in which exampleembodiments are shown. Example embodiments of the inventive conceptsmay, however, be embodied in many different forms and should not beconstrued as being limited to the embodiments set forth herein; rather,these embodiments are provided so that this disclosure will be thoroughand complete, and will fully convey the concept of example embodimentsto those of ordinary skill in the art. In the drawings, the thicknessesof layers and regions are exaggerated for clarity. Like referencenumerals in the drawings denote like elements, and thus theirdescription will be omitted.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Like numbers indicate like elementsthroughout. As used herein the term “and/or” includes any and allcombinations of one or more of the associated listed items. Other wordsused to describe the relationship between elements or layers should beinterpreted in a like fashion (e.g., “between” versus “directlybetween,” “adjacent” versus “directly adjacent,” “on” versus “directlyon”).

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises”, “comprising”, “includes” and/or “including,” if usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Example embodiments of the inventive concepts are described herein withreference to cross-sectional illustrations that are schematicillustrations of idealized embodiments (and intermediate structures) ofexample embodiments. As such, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, example embodiments of theinventive concepts should not be construed as limited to the particularshapes of regions illustrated herein but are to include deviations inshapes that result, for example, from manufacturing. For example, animplanted region illustrated as a rectangle may have rounded or curvedfeatures and/or a gradient of implant concentration at its edges ratherthan a binary change from implanted to non-implanted region. Likewise, aburied region formed by implantation may result in some implantation inthe region between the buried region and the surface through which theimplantation takes place. Thus, the regions illustrated in the figuresare schematic in nature and their shapes are not intended to illustratethe actual shape of a region of a device and are not intended to limitthe scope of example embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments of theinventive concepts belong. It will be further understood that terms,such as those defined in commonly-used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense unless expressly so defined herein.

FIGS. 1A through 1M are sectional views illustrating a method offabricating a semiconductor package according to example embodiments ofthe inventive concept. FIGS. 1N and 1O are sectional views illustratingsemiconductor packages according to embodiment modified from those ofFIGS. 1L and 1M, respectively.

Referring to FIG. 1A, a plurality of first semiconductor chips 100 maybe stacked, in a chip-on-wafer (COW) manner, on a second semiconductorchip 200. For example, the first semiconductor chips 100 may be stackedon a second semiconductor substrate 201 of the second semiconductor chip200 to form the chip-on-wafer structure.

The first semiconductor chip 100 may include a first semiconductorsubstrate 101 having a front surface 101 a and a back surface 101 b, afirst integrated circuit layer 103 provided on the front surface 101 aof the first semiconductor substrate 101, and one or more first throughelectrodes 121 vertically penetrating a portion of the firstsemiconductor substrate 101 to be electrically connected to the firstintegrated circuit layer 103. The first semiconductor substrate 101 maybe provided in the form of a chip and be made of a semiconductormaterial (e.g., silicon). The first integrated circuit layer 103 mayinclude a memory circuit, a logic circuit, or any combination thereof.The first through electrode 121 may be provided, in a via-first orvia-middle manner, on the first semiconductor substrate 101.

The second semiconductor chip 200 may include the second semiconductorsubstrate 201 having a front surface 201 a and a back surface 201 b, asecond integrated circuit layer 203 provided on the front surface 201 aof the second semiconductor substrate 201, and one or more secondthrough electrodes 221 vertically penetrating a portion of the secondsemiconductor substrate 201 to be electrically connected to the secondintegrated circuit layer 203. The second semiconductor substrate 201 maybe provided in the form of a wafer (or in wafer-level) and be formed ofa semiconductor material (e.g., silicon). The second integrated circuitlayer 203 may include a memory circuit, a logic circuit, or anycombination thereof. The second through electrode 221 may be provided,in a via-first or via-middle manner, on the second semiconductorsubstrate 201.

The first semiconductor chips 100 may be stacked, in the front-to-frontmanner, on the second semiconductor chip 200 and be electricallyconnected to the second semiconductor chip 200. For example, the firstsemiconductor chips 100 may be bonded in a flip-chip manner on thesecond semiconductor chip 200, and thus, the front surface 101 a of thefirst semiconductor substrate 101 may face the front surface 201 a ofthe second semiconductor substrate 201. First connection electrodes 123(e.g., provided in the form of a solder ball) are provided between thefirst semiconductor chip 100 and the second semiconductor chip 200 toelectrically connect the first integrated circuit layer 103 to thesecond integrated circuit layer 203. In another example embodiment, thefirst connection electrodes 123 are not provided between the firstsemiconductor chip 100 and the second semiconductor chip 200 toelectrically connect the first integrated circuit layer 103 to thesecond integrated circuit layer 203.

An example embodiment of FIG. 1A is shown in a plan view in FIG. 1P.

Referring to FIG. 1B, a first mold layer 601 may be formed on the secondsemiconductor chip 200, and then, the second semiconductor chip 200 maybe thinned. For example, the first mold layer 601 may be formed on thefront surface 201 a of the second semiconductor substrate 201 to coverthe first semiconductor chips 100, and then, the back surface 201 b ofthe second semiconductor substrate 201 may be thinned by a mechanicalprocess such as polishing. In an example embodiment, the polishing maybe performed by a grinder. Other processes to thin the back surface 201b may be used.

The first mold layer 601 may be formed to have a thickness to providerigidity to the second semiconductor substrate 201 from being bent,during performing the back-side polishing on the second semiconductorchip 200. The first mold layer 601 may include an insulating material ora polymer material (e.g., an epoxy resin). The first mold layer 601 mayinclude an epoxy filler composite that is formed to have a thermalexpansion coefficient (CTE) similar to that of silicon. For example,given than the CTE of silicon is about 3 ppm/° C., the epoxy fillercomposite may be formed to have a CTE of about 5-7 ppm/° C. In anexample embodiment, the CTE of the substrate of the second semiconductorchip 200 and the CTE of the first mold layer 601 are within an order ofmagnitude. In another example embodiment, a ratio of the CTE of thesubstrate of the second semiconductor chip 200 and a CTE of the firstmold layer 601 is in a range from 1 to 3. In example embodiments, theepoxy filler composite may include a mixture of an epoxy resin andsilica that is formed to have a silica content of about 80 wt %.Likewise, in the case where the CTE of the first mold layer 601 issimilar to that of the second semiconductor substrate 201, it may bepossible to prevent or suppress the second semiconductor substrate 201from bending.

To reduce a thickness of the second semiconductor chip 200, the backsurface 201 b of the second semiconductor substrate 201 may be polishedby a grinder 90, while the second semiconductor chip 200 is supported bythe first mold layer 601. As the result of the back-side polishing onthe second semiconductor chip 200, the second semiconductor substrate201 may be thinned to have a recessed back surface 201 c exposing thesecond through electrodes 221 in a via-first manner. In exampleembodiments, the first mold layer 601 may be used as a carrier in theback-side polishing process. This may make it possible to omitadditional processes of bonding and debonding a carrier. In exampleembodiment, a carrier is not bonded to the first nor the secondsemiconductor chips 100, 200, so a subsequent debonding of the carrieris not necessary. As a consequence of omitting the bonding and debondingof a carrier, at least two steps in the fabrication process areeliminated and allows for reduced cost and time.

Referring to FIG. 1C, back-side electrodes 223 may be formed on therecessed back surface 201 c, i.e. the thinned back surface, of thesecond semiconductor substrate 201 in a via-middle manner. The back-sideelectrodes 223 may be electrically connected to the second throughelectrodes 221, respectively, and each of the back-side electrodes 223may be provided in the form of a pad. As the result of the abovedescribed processes, the plurality of first semiconductor chips 100encapsulated with the first mold layer 601 may be stacked in achip-on-wafer (COW) manner on the wafer-level second semiconductor chip200, thereby forming a first wafer-level package 1 having a 2-heightstacked micropillar grid array structure.

In an example embodiment, a width of the first semiconductor chip 100 isless than a width of the second semiconductor chip 200 (see horizontalwidth in FIG. 1A).

Referring to FIG. 1D, a plurality of fourth semiconductor chips 400 maybe stacked in a chip-on-wafer (COW) manner on the third semiconductorchip 300. For example, the fourth semiconductor chips 400 may be stackedon a third semiconductor substrate 301 of a third semiconductor chip 300to form the chip-on-wafer structure.

Third semiconductor chip 300 may include the third semiconductorsubstrate 301 having a front surface 301 a and a back surface 301 b, athird integrated circuit layer 303 provided on the front surface 301 aof the third semiconductor substrate 301, and one or more third throughelectrodes 321 vertically penetrating a portion of the thirdsemiconductor substrate 301 to be electrically connected to the thirdintegrated circuit layer 303. The third semiconductor substrate 301 maybe a wafer-level semiconductor substrate made of a semiconductormaterial (e.g., silicon). The third integrated circuit layer 303 mayinclude a memory circuit, a logic circuit, or any combination thereof.The third through electrode 321 may be provided, in a via-first orvia-middle manner, on the third semiconductor substrate 301.

The fourth semiconductor chip 400 may include a fourth semiconductorsubstrate 401 having a front surface 401 a and a back surface 401 b, anda fourth integrated circuit layer 403 provided on the front surface 401a of the fourth semiconductor substrate 401. The fourth semiconductorchip 400 may be configured to have no through electrode. The fourthsemiconductor substrate 401 may be provided in the form of a chip (or inchip-level) and be made of a semiconductor material (e.g., silicon). Thefourth integrated circuit layer 403 may include a memory circuit, alogic circuit, or any combination thereof.

The fourth semiconductor chips 400 may be stacked, in the front-to-frontmanner, on the third semiconductor chip 300 and be electricallyconnected to the third semiconductor chip 300. For example, the fourthsemiconductor chips 400 may be bonded in a flip-chip manner on the thirdsemiconductor chip 300, and thus, the front surface 301 a of the thirdsemiconductor substrate 301 may face the front surface 401 a of thefourth semiconductor substrate 401. Second connection electrodes 423(e.g., provided in the form of a solder ball) may be provided betweenthe third semiconductor chip 300 and the fourth semiconductor chip 400to connect the third integrated circuit layer 303 electrically to thefourth integrated circuit layer 403.

Referring to FIG. 1E, a second mold layer 602 may be formed on the thirdsemiconductor chip 300, and then, the third semiconductor chip 300 maybe thinned. For example, the second mold layer 602 may be formed on thefront surface 301 a of the third semiconductor substrate 301 to coverthe fourth semiconductor chips 400, and then, the back surface 301 b ofthe third semiconductor substrate 301 may be polished.

The second mold layer 602 may be formed to have a thickness preventingthe third semiconductor substrate 301 from being bent, during performingthe back-side polishing on the third semiconductor chip 300. The secondmold layer 602 may include the same or similar material as that of thefirst mold layer 601. For example, the second mold layer 602 may includean epoxy filler composite, whose CTE is about 5-7 ppm/° C. In an exampleembodiment, the CTE of the substrate of the third semiconductor chip 300and the CTE of the second mold layer 602 are within an order ofmagnitude. In another example embodiment, a ratio of the CTE of thesubstrate of the third semiconductor chip 300 and a CTE of the secondmold layer 602 is in a range from 1 to 3. In example embodiments, thesecond mold layer 602 may include a mixture of an epoxy resin and silicathat is formed to have a silica content of about 80 wt %. Likewise, inthe case where the CTE of the second mold layer 602 is similar to thatof the third semiconductor substrate 301, it may be possible to preventor suppress the third semiconductor substrate 301 from bending.

To reduce a thickness of the third semiconductor chip 300, the backsurface 301 b of the third semiconductor substrate 301 may be polishedby the grinder 90, while the third semiconductor chip 300 is supportedby the second mold layer 602. As the result of the back-side polishingon the third semiconductor chip 300, the third semiconductor substrate301 may be thinned to have a recessed back surface 301 c exposing thethird through electrodes 321. In example embodiments, the second moldlayer 602 may be used as a carrier in the back-side polishing process.This may make it possible to omit additional processes of bonding anddebonding a carrier, as described above.

Referring to FIG. 1F, back-side electrodes 323 may be formed on the backsurface 301 c of the third semiconductor substrate 301 and beelectrically connected to the third through electrodes 321. In exampleembodiments, each of the back-side electrodes 323 may be provided in theform of a solder ball. As the result of the afore-described processes,the plurality of the fourth semiconductor chips 400 encapsulated withthe second mold layer 602 may be stacked in a chip-on-wafer (COW) manneron the wafer-level third semiconductor chip 300, thereby forming asecond wafer-level package 2 having a 2-height stacked micropillar gridarray structure.

Referring to FIG. 1G, a sawing process may be performed to the secondwafer-level package 2. For example, in the sawing process, a blade 95 ora laser beam may be used to cut the second mold layer 602 and the thirdsemiconductor chip 300 between the fourth semiconductor chips 400.

Referring to FIG. 1H, As the result of the afore-described processes,the fourth semiconductor chip 400 encapsulated with the second moldlayer 602 may be stacked on the chip-level third semiconductor chip 300,thereby forming a chip-level stacked package 3 having a 2-height stackedmicropillar grid array structure.

In an example embodiment, a width of the third semiconductor chip 300 isless than a width of the fourth semiconductor chip 400 (see horizontalwidth in FIG. 1H).

Referring to FIG. 1I, a plurality of stacked packages 3 may be stackedin a chip-on-wafer (COW) manner on the first wafer-level package 1, andthen, be encapsulated. For example, this process may include inverting,or flipping, the first wafer-level package 1 in such a way that therecessed back surface 201 c of the second semiconductor substrate 201faces upward, stacking the stacked packages 3 on the recessed backsurface 201 c of the second semiconductor substrate 201, and then,forming a third mold layer 603 on the recessed back surface 201 c of thesecond semiconductor substrate 201 to encapsulate the stacked packages3. Accordingly, a package stack 4 may be formed to include the firstwafer-level package 1 and the stacked packages 3 stacked thereon.

The third semiconductor chips 300 may be stacked in a back-to-backmanner on the second semiconductor chip 200, and thus, the back surface301 c of the third semiconductor substrate 301 may face the back surface201 c of the second semiconductor substrate 201. The third throughelectrodes 321 may be connected to the second through electrodes 221 viathe back-side electrodes 323 of the third semiconductor chip 300 and theback-side electrodes 223 of the second semiconductor chip 200, and thus,the stacked packages 3 may be electrically connected to the firstwafer-level package 1. The third mold layer 603 may be formed of thesame or similar material as the first mold layer 601 and/or the secondmold layer 602.

Referring to FIG. 1J, a polishing process may be performed to a backsurface of the package stack 4. For example, the first mold layer 601and the first semiconductor substrate 101 may be polished by the grinder90, while the first wafer-level package 1 is supported by the third moldlayer 603, thereby thinning the first semiconductor chips 100. As theresult of the polishing process, the first semiconductor substrate 101may be thinned to have a recessed back surface 101 c exposing the firstthrough electrodes 121. As the result of the polishing process, a shapeof the first mold layer 601 may also be changed to expose the recessedback surface 101 c of the first semiconductor substrate 101.

Referring to FIG. 1K, outer electrodes 125 may be formed on the firstsemiconductor chips 100, and then, a sawing process may be performed tothe package stack 4. For example, the outer electrodes 125 may be formedon the back surface 101 c of the first semiconductor substrate 101 andbe electrically connected to the first through electrodes 121. Inexample embodiments, each of the outer electrodes 125 may be provided inthe form of a solder ball. After or before the formation of the outerelectrodes 125, the sawing process may include cutting the third moldlayer 603, the second semiconductor chip 200 and the first mold layer601 using the blade 95 or the laser beam.

Referring to FIG. 1L, a semiconductor package 5 having a 4-heightstacked micropillar grid array structure may be formed as the result ofthe sawing process to the package stack 4. The semiconductor package 5may be one of chip-level elements divided by the sawing process andinclude the stacked package 3 stacked on the second semiconductor chip200.

For example, the semiconductor package 5 may include the firstsemiconductor chip 100, in which the first semiconductor substrate 101with the upward front surface 101 a is provided and the first throughelectrodes 121 are provided, the second semiconductor chip 200 stackedin the front-to-front manner on the first semiconductor chip 100 to havethe second through electrodes 221, the third semiconductor chip 300stacked in the back-to-back manner on the second semiconductor chip 200to have the third through electrodes 321, and the fourth semiconductorchip 400 stacked in the front-to-front manner on the third semiconductorchip 300.

The first through electrodes 121 may be connected to the second throughelectrodes 221 via the first connection electrodes 123, and thus, thefirst semiconductor chip 100 and the second semiconductor chip 200 maybe electrically connected to each other. Similarly, the second throughelectrodes 221 may be connected to the third through electrodes 321 viathe back-side electrodes 323, and thus, the second semiconductor chip200 and the third semiconductor chip 300 may be electrically connectedto each other. The third semiconductor chip 300 and the fourthsemiconductor chip 400 may be electrically connected to each other,because the second connection electrodes 423 are connected to the thirdthrough electrodes 321.

The first semiconductor chip 100 may be encapsulated by the first moldlayer 601 exposing the back surface 101 c of the first semiconductorsubstrate 101. The second semiconductor chip 200 may be partiallyencapsulated by the first mold layer 601 and the third mold layer 603,and the second semiconductor chip 200 may be formed to have a sidesurface 200 s exposed to the outside. The fourth semiconductor chip 400may be stacked on the third semiconductor chip 300, and the stackedpackage 3 encapsulated with the second mold layer 602 may beencapsulated with the third mold layer 603. Accordingly, the thirdsemiconductor chip 300 may be encapsulated with the second mold layer602 and the third mold layer 603, and the fourth semiconductor chip 400may be doubly encapsulated with the second mold layer 602 and the thirdmold layer 603. In other example embodiments, the third mold layer 603may be formed to encapsulate the top and bottom surfaces of the stackedpackage 3 and expose a side surface 3 s of the stacked package 3.

The outer electrodes 125 on the back surface 101 c of the firstsemiconductor substrate 101 may be connected to an electric device, suchas a semiconductor chip, a semiconductor package, a printed circuitboard, or a module substrate, and thus, the semiconductor package 5 maybe electrically connected to the electric device.

In certain embodiments, as shown in FIG. 1N, a semiconductor package 5 cmay be fabricated to have a stacked micropillar grid array structure.For example, the semiconductor package 5 c may be fabricated in such away that a first upper semiconductor chip 100 a may be further providedbetween the first semiconductor chip 100 (hereinafter, referred to as afirst lower semiconductor chip) and the second semiconductor chip 200and a fourth lower semiconductor chip 400 a may be further providedbetween the third semiconductor chip 300 and the fourth semiconductorchip 400 (hereinafter, referred to as a fourth upper semiconductorchip). Here, the first upper semiconductor chip 100 a may have the sameor similar structure to that of the first lower semiconductor chip 100,and the fourth lower semiconductor chip 400 a may have the same orsimilar structure to that of the fourth upper semiconductor chip 400.

The first upper semiconductor chip 100 a may include a semiconductorsubstrate 111 a having through electrodes 121 a and connectionelectrodes 123 a, which may be electrically connected to the first lowersemiconductor chip 100 and the second semiconductor chip 200,respectively. The first upper semiconductor chip 100 a may be stacked ina chip-on-wafer (COW) manner on the second semiconductor chip 200,before the stacking of the first lower semiconductor chip 100 in thefabrication of the first wafer-level package 1 of FIG. 1C, and then, beencapsulated with the first mold layer 601. The first uppersemiconductor chip 100 a may be provided to form a back-to-frontstructure with respect to the first lower semiconductor chip 100 andform a front-to-front structure with respect to the second semiconductorchip 200.

The fourth lower semiconductor chip 400 a may include a semiconductorsubstrate 411 a having through electrodes 421 a and connectionelectrodes 423 a, which may be electrically connected to the thirdsemiconductor chip 300 and the fourth upper semiconductor chip 400,respectively. The fourth lower semiconductor chip 400 a may be stackedin a chip-on-wafer (COW) manner on the third semiconductor chip 300,before the stacking of the fourth upper semiconductor chip 400 in thefabrication of the second wafer-level package 2 of FIG. 1F, and then, beencapsulated with the second mold layer 602. The fourth lowersemiconductor chip 400 a may be provided to form a back-to-frontstructure with respect to the third semiconductor chip 300 and form afront-to-front structure with respect to the fourth upper semiconductorchip 400.

Referring to FIG. 1M, the semiconductor package 5 may be mounted on apackage substrate 80, thereby forming a semiconductor package 6. Forexample, the formation of the semiconductor package 6 may includemounting the semiconductor package 5 on a front surface 80 a of thepackage substrate 80 (e.g., printed circuit board) and forming an outermold layer 83 to cover the semiconductor package 5. Solder balls 85 maybe attached on a back surface 80 b of the package substrate 80. Thesemiconductor package 5 may be electrically connected to the packagesubstrate 80 via the outer electrodes 125 and be electrically connectedto an electric device, such as a semiconductor chip, a semiconductorpackage, or a module substrate, via the solder balls 85.

In certain embodiments, as shown in a semiconductor package 6 c of FIG.1O, the semiconductor package 5 c of FIG. 1N may be mounted on thepackage substrate 80 (e.g., PCB) and the outer mold layer 83 may beformed thereon.

FIGS. 2A through 2I are sectional views illustrating a method offabricating a semiconductor package according to other exampleembodiments of the inventive concept. For the sake of brevity, theelements and features of this example that are similar to thosepreviously shown and described will not be described in much furtherdetail.

Referring to FIG. 2A, a plurality of the first semiconductor chips 100may be bonded in a chip-on-wafer and flip-chip manner on the frontsurface 201 a of the second semiconductor substrate 201 of the secondsemiconductor chip 200. The first semiconductor chips 100 may be stackedin the front-to-front manner on the second semiconductor chip 200 and beelectrically connected to the second semiconductor chip 200 via thefirst connection electrodes 123. The first semiconductor chip 100 mayinclude the first integrated circuit layer 103 provided on the frontsurface 101 a of the chip-level first semiconductor substrate 101. Thesecond semiconductor chip 200 may include the second integrated circuitlayer 203 provided on the front surface 201 a of the wafer-level secondsemiconductor substrate 201.

Referring to FIG. 2B, the first mold layer 601 may be formed on thefront surface 201 a of the second semiconductor substrate 201 to coverthe first semiconductor chips 100. Thereafter, the back surface 201 b ofthe second semiconductor substrate 201 may be polished by the grinder90, while the second semiconductor chip 200 is supported by the firstmold layer 601. As the result of the back-side polishing process, thesecond semiconductor substrate 201 may be thinned to have the recessback surface 201 c exposed to the outside.

Referring to FIG. 2C, the second through electrodes 221 may be formedthrough the second semiconductor substrate 201 and be electricallyconnected to the second integrated circuit layer 203. For example, theformation of the second through electrode 221 may include formingvertical hole 220 by dry-etching or drilling the back surface 201 c ofthe second semiconductor substrate 201, and then, filling the verticalhole 220 with a conductive material (e.g., tungsten or copper) using aelectroplating or deposition process.

The pad-shaped back-side electrode 223 may be further formed on the backsurface 201 c of the second semiconductor substrate 201 to be connectedto the second through electrode 221. In example embodiments, theback-side electrode 223 may be formed using the plating or depositionprocess for forming the second through electrode 221, and thus, theback-side electrode 223 and the second through electrode 221 may beformed at the same time and form a single structure. In other exampleembodiments, the back-side electrode 223 may be formed using anadditional process, after the formation of the second through electrode221.

As the result of the afore-described processes, the first semiconductorchips 100 may be stacked in a chip-on-wafer (COW) manner on thewafer-level second semiconductor chip 200 including the second throughelectrodes 221 formed by a via last process, thereby forming a firstwafer-level package 1 a having a 2-height stacked micropillar grid arraystructure.

Referring to FIG. 2D, a plurality of the fourth semiconductor chips 400may be bonded in a chip-on-wafer and flip-chip manner on the frontsurface 301 a of the third semiconductor substrate 301 of the thirdsemiconductor chip 300. The fourth semiconductor chips 400 may bestacked in the front-to-front manner on the third semiconductor chip 300and be electrically connected to the third semiconductor chip 300 viathe second connection electrodes 423. The third semiconductor chip 300may include the third integrated circuit layer 303 provided on the frontsurface 301 a of the wafer-level third semiconductor substrate 301. Thefourth semiconductor chip 400 may include the fourth integrated circuitlayer 403 provided on the front surface 401 a of the chip-level fourthsemiconductor substrate 401.

Referring to FIG. 2E, the second mold layer 602 may be formed on thefront surface 301 a of the third semiconductor substrate 301 to coverthe fourth semiconductor chips 400. Thereafter, the back surface 301 bof the third semiconductor substrate 301 may be polished by the grinder90, while the third semiconductor chip 300 is supported by the secondmold layer 602. As the result of the back-side polishing process, thethird semiconductor substrate 301 may be thinned to have the recess backsurface 301 c exposed to the outside.

Referring to FIG. 2F, the third through electrodes 321 may be formedthrough the third semiconductor substrate 301 and be electricallyconnected to the third integrated circuit layer 303. For example, theformation of the third through electrode 321 may include formingvertical hole 320 by dry-etching or drilling the back surface 301 c ofthe third semiconductor substrate 301, and then, filling the verticalhole 320 with a conductive material (e.g., tungsten or copper) using aelectroplating or deposition process. The solder-ball-shaped back-sideelectrode 323 may be further formed on the back surface 301 c of thethird semiconductor substrate 301 to be connected to the third throughelectrode 321.

As the result of the afore-described processes, the fourth semiconductorchips 400 may be stacked in a chip-on-wafer (COW) manner on thewafer-level third semiconductor chip 300, in which the third throughelectrodes 321 formed by a via last process are provided, therebyforming a second wafer-level package 2 a having a 2-height stackedmicropillar grid array structure.

Referring to FIG. 2G, the second wafer-level package 2 a may be sawn toform a plurality of stacked packages 3 a, and then, the stacked packages3 a may be stacked in a chip-on-wafer (COW) manner on the firstwafer-level package 1 a and be encapsulated. For example, the stackedpackages 3 a may be stacked on the back surface 201 c of the secondsemiconductor substrate 201, and then, the third mold layer 603 may beformed on the back surface 201 c of the second semiconductor substrate201 to encapsulate the stacked packages 3 a. Accordingly, a packagestack 4 a may be formed to include the first wafer-level package 1 a andthe stacked packages 2 a stacked thereon.

Referring to FIG. 2H, the first mold layer 601 and the back surface 101b of the first semiconductor substrate 101 may be polished by thegrinder 90 to reduce a thickness of the first semiconductor chips 100,while the first wafer-level package 1 a is supported by the third moldlayer 603. As the result of the back-side polishing process, the firstsemiconductor substrate 101 may be thinned to have the recessed backsurface 101 c exposing the first through electrodes 121.

Referring to FIG. 2I, a via-last process may be performed to form thefirst through electrodes 121 electrically connected to the firstintegrated circuit layer 103 through the first semiconductor substrate101. For example, the formation of the first through electrode 121 mayinclude forming vertical hole 120 by dry-etching or drilling the backsurface 101 c of the first semiconductor substrate 101, and then,filling the vertical hole 120 with a conductive material (e.g., tungstenor copper) using a electroplating or deposition process. Thesolder-ball-shaped outer electrode 125 may be further formed on the backsurface 101 c of the first semiconductor substrate 101 to be connectedto the first through electrode 121. Thereafter, a sawing process may beperformed to the package stack 4 a in the same or similar manner as thatdescribed with reference to FIG. 1K, thereby forming the semiconductorpackage 5 of FIG. 1L. The semiconductor package 5 obtained from thesawing of the package stack 4 a may be mounted on the package substrate80, as shown in FIG. 1M, to form the semiconductor package 6.

FIGS. 3A through 3E are sectional views illustrating a method offabricating a semiconductor package according to still other exampleembodiments of the inventive concept. For the sake of brevity, theelements and features of this example that are similar to thosepreviously shown and described will not be described in much furtherdetail.

Referring to FIG. 3A, the second wafer-level package 2 may be stacked onthe first wafer-level package 1 and be encapsulated to form a packagestack 4 b. For example, the first wafer-level package 1 may be formedusing, for example, the same or similar process as that described withreference to FIGS. 1A through 1C to have a 2-height stacked micropillargrid array structure, and the second wafer-level package 2 may be formedusing, for example, the same or similar process as that described withreference to FIGS. 1D through 1F to have a 2-height stacked micropillargrid array structure. The second wafer-level package 2 may be stacked ina wafer-on-wafer (WOW) manner on the back surface 201 c of the secondsemiconductor substrate 201 of the first wafer-level package 1, and thethird mold layer 603 may be formed on the back surface 101 c of thesecond semiconductor substrate 201 to encapsulate the second wafer-levelpackage 2.

Referring to FIG. 3B, the first mold layer 601 and the back surface 101b of the first semiconductor substrate 101 may be polished by thegrinder 90, while the first wafer-level package 1 is supported by thethird mold layer 603. As the result of the back-side polishing process,the first semiconductor substrate 101 may be thinned to have the recessback surface 101 c exposing the first through electrodes 121.

Referring to FIG. 3C, the outer electrodes 125 may be formed on the backsurface 101 c of the first semiconductor substrate 101 to beelectrically connected to the first through electrodes 121. After orbefore the formation of the outer electrodes 125, a sawing process usingthe blade 95 or the laser beam may be performed to the package stack 4b.

Referring to FIG. 3D, as the result of the sawing process to the packagestack 4 b, a semiconductor package 5 b may be fabricated to include a 4Hstacked micropillar grid array structure in which the first to fourthsemiconductor chips 100-400 are sequentially stacked. In thesemiconductor package 5 b, the side surface 200 s of the secondsemiconductor chip 200 and a side surface 300 s of the thirdsemiconductor chip 300 may be exposed to the outside. Except for thisdifference, the semiconductor package 5 b may be configured to have thesame or similar features as those of the semiconductor package 5 of FIG.1L.

Referring to FIG. 3E, the semiconductor package 5 b may be mounted onthe front surface 80 a of the package substrate 80 (e.g., PCB) and thenbe encapsulated with the outer mold layer 83 to form a semiconductorpackage 6 b. The solder balls 85 may be attached on the back surface 80b of the package substrate 80 to connect the semiconductor package 6 belectrically to other electric device, such as a semiconductor chip, asemiconductor package, a module substrate.

FIG. 4A is a block diagram illustrating a memory card including thesemiconductor packages according to example embodiments of the inventiveconcept. FIG. 4B is a block diagram illustrating an informationprocessing system including the semiconductor packages according toexample embodiments of the inventive concept.

Referring to FIG. 4A, a memory card 1200 may include a host 1230, amemory device 1210, and a memory controller 1220 controlling dataexchanges therebetween. A static random access memory (SRAM) 1221 may beused as an operating memory of a processing unit 1222. A host interface1223 may include a data exchange protocol of a host connected to amemory card 1200. An error correction block 1224 may be configured todetect and correct errors included in data read from a memory device1210. A memory interface 1225 may be configured to interface with thememory device 1210. The processing unit 1222 may perform general controloperations for data exchange of the memory controller 1220. The memorydevice 1210 may include at least one of the semiconductor packages 5, 6,5 b, and 6 b according to example embodiments of the inventive concept.

Referring to FIG. 4B, an information processing system 1300 may berealized using a memory system 1310 including at least one of thesemiconductor packages 5, 6, 5 b, and 6 b according to exampleembodiments of the inventive concept. For instance, the informationprocessing system 1300 may be a mobile device and/or a computer. Inexample embodiments, the information processing system 1300 may furtherinclude a modem 1320, a central processing unit (CPU) 1330, a randomaccess memory (RAM) 1340, and a user interface 1350, which areelectrically connected to a system bus 1360, in addition to the memorysystem 1310. The memory system 1310 may include a memory device 1311 anda memory controller 1312, and in some embodiments, the memory system1310 may be configured substantially identical to the memory card 1200described with respect to FIG. 4A. Data processed by the CPU 1330 and/orinput from the outside may be stored in the memory system 1310. Incertain embodiments, the information processing system 1300 may furtherinclude or be, for example, an application chipset, a camera imagesensor, a camera image signal processor (ISP), an input/output device,or the like.

According to example embodiments of the inventive concept, it ispossible to perform a wafer polishing process without the use of anadditional carrier. Accordingly, it is possible to omit additionalprocesses of bonding and debonding a carrier and thereby to improveproductivity and reduce fabrication cost. Since a mold layer to beformed on a wafer has a thermal expansion coefficient similar to that ofthe wafer, it is possible to prevent or suppress a bending or warp ofthe wafer and, consequently, process failures. In addition, the wafermolding technology according to example embodiments of the inventiveconcept can be applied to realize various ways (e.g., via-first,via-middle, and via-last processes) for forming the through electrode orTSV.

While example embodiments of the inventive concepts have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madetherein without departing from the spirit and scope of the attachedclaims.

What is claimed is:
 1. A semiconductor device comprising: a firstsemiconductor package comprising: a first chip comprising a first activelayer provided on a first side of the first chip; a second chipcomprising: first through-electrodes; and a second active layer providedon a second side of the second chip, the first chip and the second chipbeing stacked and the first active layer facing the second active layer;and a mold layer disposed between the first chip and the second chip;and a second semiconductor package comprising: a third chip comprising:second through-electrodes; a third active layer provided on a third sideof the third chip; and a fourth chip comprising a fourth active layerprovided on a fourth side of the fourth chip, the third chip and thefourth chip being stacked and the third active layer facing the fourthactive layer; wherein a fifth side of the third chip, opposite to thethird side of the third chip, is configured to face a sixth side of thesecond chip opposite to the second side of the second chip, wherein thethird chip has a first width and the second chip has a second width thatis larger than the first width, wherein in the first semiconductorpackage, no additional chip is provided between the first chip and thesecond chip, and wherein the fourth chip has a third width that issmaller than the first width of the third chip.
 2. The semiconductordevice of claim 1, wherein the first chip further comprises thirdthrough-electrodes.
 3. The semiconductor device of claim 2 furthercomprising a plurality of electrodes which connect the firstthrough-electrodes and the second through-electrodes.
 4. A semiconductordevice comprising: a first semiconductor package comprising: a firstchip comprising: a first active layer provided on a first side of thefirst chip; and first through-electrodes; a second chip comprising: asecond active layer provided on a second side of the second chip; andsecond through-electrodes, the first chip and the second chip beingstacked and the first active layer facing the second active layer; and amold layer disposed between the first chip and the second chip; and asecond semiconductor package comprising: a third chip comprising: athird active layer provided on a third side of the third chip; and thirdthrough-electrodes; and a fourth chip comprising a fourth active layerprovided on a fourth side of the fourth chip, the third chip and thefourth chip being stacked and the third active layer facing the fourthactive layer; wherein a fifth side of the third chip, opposite to thethird side of the third chip, is configured to face a sixth side of thesecond chip opposite to the second side of the second chip, wherein thesemiconductor device further comprises a plurality of electrodes whichconnect the second through-electrodes and the third through-electrodes,wherein the first chip has a first width and the second chip has asecond width that is longer than the first width, and wherein the fourthchip has a fourth width and the third chip has a third width that islonger than the fourth width.
 5. The semiconductor device of claim 1,wherein a coefficient of thermal expansion (CTE) of a substrate of thesecond chip and a CTE of the mold layer are within an order ofmagnitude.
 6. The semiconductor device of claim 1, wherein a ratio of acoefficient of thermal expansion (CTE) of a substrate of the second chipand a CTE of the mold layer is in a range from 1 to
 3. 7. Thesemiconductor device of claim 1 further comprising first connectionelectrodes electrically connecting the first active layer and the secondactive layer.
 8. A semiconductor device comprising: a firstsemiconductor package comprising: a first chip comprising: a firstactive layer provided on a first side of the first chip; and firstthrough-electrodes; a second chip being stacked on the first chip andcomprising: a second active layer provided on a second side of thesecond chip; and second through-electrodes; and a mold layer disposedbetween the first chip and the second chip; and a second semiconductorpackage comprising: a third chip comprising a third active layerprovided on a third side of the third chip; and a fourth chip comprisinga fourth active layer provided on a fourth side of the fourth chip, thefourth chip being stacked on the third chip; wherein a fifth side of thethird chip, opposite to the third side of the third chip, is configuredto face a sixth side of the second chip, opposite to the second side ofthe second chip, wherein the semiconductor device further comprises aplurality of electrodes which connect the second through electrodes andthird through electrodes, wherein the first chip has a first width andthe second chip has a second width that is longer than the first width,and wherein the fourth chip has a fourth width and the third chip as athird width that is longer than the fourth width.
 9. The semiconductordevice of claim 1, wherein the fourth chip comprises a non-through viasemiconductor chip.